17836228. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Jongman Park of Hwaseong-si (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17836228 titled 'MEMORY DEVICE
Simplified Explanation
The abstract describes a memory device that includes a substrate, a ferroelectric field effect transistor, a first channel, a selection word line, a first gate dielectric layer, and a cell word line.
- The memory device includes a substrate, which serves as the base for the device.
- A ferroelectric field effect transistor is placed on the substrate, which is a type of transistor that utilizes a ferroelectric material to store data.
- A first channel is connected to the gate structure of the ferroelectric field effect transistor and extends vertically from it.
- A selection word line is positioned on one side of the first channel, which is used to select a specific memory cell.
- A first gate dielectric layer is placed between the first channel and the selection word line, which acts as an insulating layer.
- A cell word line is located on top of the first channel, which is used to access the memory cell.
Potential Applications
- This memory device can be used in various electronic devices, such as computers, smartphones, and tablets.
- It can be utilized in data storage systems, allowing for high-density and fast-access memory.
Problems Solved
- The memory device solves the problem of limited storage capacity by providing a high-density memory solution.
- It addresses the need for fast-access memory by utilizing a ferroelectric field effect transistor.
Benefits
- The memory device offers high-density storage, allowing for more data to be stored in a smaller space.
- It provides fast access to stored data, improving the overall performance of electronic devices.
- The use of a ferroelectric field effect transistor allows for non-volatile memory, meaning data is retained even when power is lost.
Original Abstract Submitted
Provided is a memory device. The memory device may include a substrate, a ferroelectric field effect transistor disposed on the substrate, a first channel contacting a gate structure of the ferroelectric field effect transistor and extending in a vertical direction from the gate structure of the ferroelectric field effect transistor, a selection word line disposed at one side of the first channel, a first gate dielectric layer disposed between the first channel and the selection word line, and a cell word line disposed on top of the first channel.
