17831368. ROBUST FUNCTIONALITY FOR MEMORY MANAGEMENT ASSOCIATED WITH HIGH-TEMPERATURE STORAGE AND OTHER CONDITIONS simplified abstract (Micron Technology, Inc.)

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ROBUST FUNCTIONALITY FOR MEMORY MANAGEMENT ASSOCIATED WITH HIGH-TEMPERATURE STORAGE AND OTHER CONDITIONS

Organization Name

Micron Technology, Inc.

Inventor(s)

Angelo Visconti of Appiano Gentile (CO) (IT)

Jonathan J. Strand of Boise ID (US)

ROBUST FUNCTIONALITY FOR MEMORY MANAGEMENT ASSOCIATED WITH HIGH-TEMPERATURE STORAGE AND OTHER CONDITIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17831368 titled 'ROBUST FUNCTIONALITY FOR MEMORY MANAGEMENT ASSOCIATED WITH HIGH-TEMPERATURE STORAGE AND OTHER CONDITIONS

Simplified Explanation

The patent application describes methods, systems, and devices for memory management in high-temperature storage environments. Here is a simplified explanation of the abstract:

  • A memory device applies a pattern to memory cells before or after a power state procedure.
  • The pattern indicates a data state for each memory cell in a portion of memory cells.
  • The pattern can be the same data state for each cell, alternating data states, or an asymmetric switching pattern over multiple cycles.
  • The memory device writes logic values to memory cells based on the pattern.

Potential applications of this technology:

  • High-temperature storage environments where memory devices need to function reliably.
  • Industrial settings with extreme temperatures, such as manufacturing plants or oil refineries.
  • Aerospace and automotive industries where memory devices are exposed to high temperatures.

Problems solved by this technology:

  • Memory cells in high-temperature environments can experience data corruption or loss.
  • Traditional memory management techniques may not be effective in extreme temperature conditions.
  • The described methods provide a robust solution to maintain memory functionality in high-temperature storage.

Benefits of this technology:

  • Improved reliability of memory devices in high-temperature environments.
  • Enhanced data integrity and reduced risk of data loss or corruption.
  • Increased lifespan of memory devices operating in extreme temperature conditions.


Original Abstract Submitted

Methods, systems, and devices for robust functionality for memory management associated with high-temperature storage are described. A memory device may apply a pattern (e.g., an imprint conditioning or deletion pattern) to at least a portion of memory cells of a memory array associated with a memory device before or after a power state procedure. The memory device may determine the pattern from various possible patterns, where the pattern may indicate a data state for each memory cell of the portion of memory cells. The pattern may indicate a same data state for each memory cell, an alternating data state for each memory cell, or an asymmetric switching pattern over a plurality of cycles, or any combination thereof. The memory device may write a respective logic value to at least some of the one or more memory cells of the portion of memory cells according to the pattern.

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