18501360. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Fu-Chen Chang of New Taipei City (TW)

Kuo-Chi Tu of Hsinchu City (TW)

Tzu-Yu Chen of Kaohsiung City (TW)

Sheng-Hung Shih of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18501360 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a random access memory (RAM) structure and a dielectric layer. The RAM structure consists of a bottom electrode layer, a ferroelectric layer, and a top electrode layer, all arranged over a substrate. The dielectric layer surrounds a lower portion of the RAM structure.

  • The RAM structure is composed of a bottom electrode layer, a ferroelectric layer, and a top electrode layer.
  • The dielectric layer surrounds a lower portion of the RAM structure.
  • The bottom electrode layer has a lateral portion and a vertical portion that extends upward from the lateral portion.

Potential Applications: - Memory storage devices - Semiconductor devices - Consumer electronics

Problems Solved: - Improved data storage and retrieval in memory devices - Enhanced performance and reliability of semiconductor devices

Benefits: - Increased data storage capacity - Faster data access speeds - Higher efficiency and reliability in semiconductor devices


Original Abstract Submitted

A semiconductor device includes a random access memory (RAM) structure and a dielectric layer. The RAM structure is over a substrate and includes a bottom electrode layer, a ferroelectric layer over the bottom electrode layer, and a top electrode layer over the ferroelectric layer. The dielectric layer is over the substrate and laterally surrounds a lower portion of the RAM structure. From a cross-sectional view, the bottom electrode layer of the RAM structure has a lateral portion and a vertical portion, and the vertical portion upwardly extends from the lateral portion to a position higher than a top surface of the dielectric layer.

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