18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Han-Jong Chia of Hsinchu City (TW)

Sai-Hooi Yeong of Zhubei City (TW)

GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18510975 titled 'GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE

Simplified Explanation

The patent application describes an integrated chip with a unique data storage structure.

  • The chip includes a first dielectric layer over a substrate.
  • A first conductive structure is on top of the first dielectric layer.
  • A data storage structure is located between the first dielectric layer and the first conductive structure.
  • The data storage structure consists of a data storage layer and a grid structure.
  • The grid structure has opposing sidewalls spaced across the width of the first conductive structure.
  • The data storage layer is along the opposing sidewalls.
  • The data storage layer is made of a first material, while the grid structure is made of a second material different from the first material.

Potential Applications

  • Data storage devices
  • Integrated circuits
  • Semiconductor technology

Problems Solved

  • Enhanced data storage capabilities
  • Improved integration of components in a chip
  • Increased efficiency in data processing

Benefits

  • Higher data storage density
  • Improved data access speeds
  • Enhanced overall performance of integrated chips


Original Abstract Submitted

Various embodiments of the present disclosure are directed towards an integrated chip including a first dielectric layer over a substrate. A first conductive structure overlies the first dielectric layer. A data storage structure is disposed between the first dielectric layer and the first conductive structure. The data storage structure comprises a data storage layer and a grid structure. The grid structure comprises a plurality of opposing sidewalls spaced across a width of the first conductive structure. The data storage layer is disposed along the plurality of opposing sidewalls. The data storage layer comprises a first material and the grid structure comprises a second material different from the first material.

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