17893672. WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES
Organization Name
Inventor(s)
Fatma Arzum Simsek-ege of Boise ID (US)
Mingdong Cui of Folsom CA (US)
WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17893672 titled 'WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES
Simplified Explanation
The abstract describes methods, systems, and devices for word line drivers for multiple-die memory devices. It involves coupling access line driver circuitry of a second semiconductor die with access line conductors of a first semiconductor die by forming electrical contacts between the semiconductor dies.
- Memory device includes a first semiconductor die with memory cells and access lines, and a second semiconductor die with access line driver circuitry.
- Second semiconductor die is located in contact with or adjacent to the first semiconductor die.
- Electrical contacts are formed to couple the access line driver circuitry of the second semiconductor die with the access line conductors of the first semiconductor die.
- Cavities may be formed through the second semiconductor die and at least a portion of the first semiconductor die for forming the electrical contacts.
Potential Applications
- Memory devices with improved word line drivers for multiple-die configurations.
- High-density memory systems with efficient access line driver circuitry.
Problems Solved
- Efficient coupling of access line driver circuitry in multiple-die memory devices.
- Improved performance and reliability of memory devices.
Benefits
- Enhanced functionality and performance of memory devices.
- Increased data storage capacity in memory systems.
- Improved manufacturing process for memory devices.
Original Abstract Submitted
Methods, systems, and devices for word line drivers for multiple-die memory devices are described. A memory device may include a first semiconductor die associated with at least memory cells and corresponding access lines of the memory device, and a second semiconductor die associated with at least access line driver circuitry of the memory device. The second semiconductor die may be located in contact with or otherwise adjacent to the first semiconductor die, and electrical contacts may be formed to couple the access line driver circuitry of the second semiconductor die with the access line conductors of the first semiconductor die. For example, cavities may be formed through the second semiconductor die and at least a portion of the first semiconductor die, and the electrical contacts may be formed between the semiconductor dies at least in part from forming a conductive material in the cavities.
