17818839. Three-Dimensional Memory Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
Three-Dimensional Memory Device and Method
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chung-Te Lin of Tainan City (TW)
Katherine H. Chiang of New Taipei City (TW)
Three-Dimensional Memory Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 17818839 titled 'Three-Dimensional Memory Device and Method
Simplified Explanation
The abstract describes a device that includes multiple layers and strips for improved performance. Here are the key points:
- The device consists of a pair of dielectric layers and a word line placed between them.
- The sidewalls of the dielectric layers are recessed from the sidewall of the word line.
- A tunneling strip is present on the top surface of the word line, as well as on the sidewalls and bottom surface of the word line and the dielectric layers.
- A semiconductor strip is located on the tunneling strip.
- A bit line makes contact with a sidewall of the semiconductor strip.
- A source line also contacts the sidewall of the semiconductor strip.
Potential applications of this technology:
- Memory devices: This device configuration could be used in memory devices to enhance their performance and efficiency.
- Data storage: The improved design could be beneficial in data storage devices, allowing for faster read and write operations.
- Integrated circuits: This technology could be applied in the development of integrated circuits to improve their functionality and reliability.
Problems solved by this technology:
- Performance improvement: The recessed sidewalls and the presence of tunneling strips help in enhancing the overall performance of the device.
- Contact efficiency: The bit line and source line contacting the sidewall of the semiconductor strip ensure efficient electrical connections.
Benefits of this technology:
- Enhanced performance: The design of this device allows for improved performance in terms of speed and efficiency.
- Compact design: The use of multiple layers and strips enables a more compact device design, which is beneficial for space-constrained applications.
- Reliable connections: The contact between the bit line, source line, and the semiconductor strip ensures reliable electrical connections.
Original Abstract Submitted
In an embodiment, a device includes: a pair of dielectric layers; a word line between the dielectric layers, sidewalls of the dielectric layers being recessed from a sidewall of the word line; a tunneling strip on a top surface of the word line, the sidewall of the word line, a bottom surface of the word line, and the sidewalls of the dielectric layers; a semiconductor strip on the tunneling strip; a bit line contacting a sidewall of the semiconductor strip; and a source line contacting the sidewall of the semiconductor strip.
