Taiwan semiconductor manufacturing co., ltd. (20240096388). MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract
Contents
- 1 MEMORY CELL AND METHOD OF OPERATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY CELL AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY CELL AND METHOD OF OPERATING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
MEMORY CELL AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096388 titled 'MEMORY CELL AND METHOD OF OPERATING THE SAME
Simplified Explanation
A memory cell described in the patent application includes a read word line, a write transistor, and a read transistor connected to the write transistor. The read transistor contains a ferroelectric layer and is connected to the read word line. The write transistor is responsible for adjusting the polarization state of the read transistor, which corresponds to the stored data value of the memory cell.
- Read transistor with ferroelectric layer
- Write transistor adjusting polarization state
- Read word line connected to read transistor
- Stored data value represented by polarization state
Potential Applications
This technology could be used in:
- Non-volatile memory devices
- Embedded systems
- IoT devices
Problems Solved
The technology addresses:
- Data retention issues in memory cells
- Faster read and write operations
- Reduced power consumption
Benefits
The benefits of this technology include:
- Improved memory cell performance
- Enhanced data reliability
- Lower energy consumption
Potential Commercial Applications
With its advantages, this technology could be applied in:
- Consumer electronics
- Automotive systems
- Medical devices
Possible Prior Art
One possible prior art for this technology is:
- Ferroelectric memory cells
- Non-volatile memory technologies
Unanswered Questions
How does the technology impact the overall memory cell size and density?
The article does not provide information on the potential effects of this technology on the size and density of memory cells.
Are there any limitations to the read and write speeds of the memory cell using this technology?
The article does not address any potential limitations in terms of read and write speeds that may arise from implementing this technology.
Original Abstract Submitted
a memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. the read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line, and a source terminal of the read transistor coupled to a first node. the write transistor is configured to adjust a polarization state of the read transistor, the polarization state corresponding to a stored data value of the memory cell.
