18053182. Ferroelectric Memory Device And Electronic Device Including The Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Ferroelectric Memory Device And Electronic Device Including The Same
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
Ferroelectric Memory Device And Electronic Device Including The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18053182 titled 'Ferroelectric Memory Device And Electronic Device Including The Same
Simplified Explanation
The abstract describes a ferroelectric memory device that includes a source, a drain, a channel layer, and two gate electrodes. A ferroelectric layer is placed between the channel layer and each gate electrode. Different voltages can be applied to the gate electrodes.
- The device consists of a source, a drain, a channel layer, and two gate electrodes.
- A ferroelectric layer is positioned between the channel layer and each gate electrode.
- The first gate electrode and the second gate electrode are spaced apart from each other.
- Different voltages can be applied to the first and second gate electrodes.
Potential Applications
- Memory devices
- Data storage systems
- Electronic devices requiring non-volatile memory
Problems Solved
- Provides a ferroelectric memory device with improved performance and reliability.
- Enables the storage of data even when power is turned off.
- Reduces power consumption and increases device lifespan.
Benefits
- Enhanced performance and reliability of memory devices.
- Non-volatile memory storage.
- Lower power consumption and longer device lifespan.
Original Abstract Submitted
A ferroelectric memory device may include a source, a drain, a channel layer between the source and the drain and connected to the source and the drain, a first gate electrode and a second gate electrode located on the channel layer to be spaced apart from each other, and a ferroelectric layer between the channel layer and the first gate electrode and between the channel layer and the second gate electrode. Different voltages may be applied to the first gate electrode and the second gate electrode.
