Huawei technologies co., ltd. (20240130139). FERROELECTRIC MEMORY AND STORAGE DEVICE simplified abstract
Contents
- 1 FERROELECTRIC MEMORY AND STORAGE DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FERROELECTRIC MEMORY AND STORAGE DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FERROELECTRIC MEMORY AND STORAGE DEVICE
Organization Name
Inventor(s)
JEFFREY JUNHAO Xu of Shenzhen (CN)
FERROELECTRIC MEMORY AND STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130139 titled 'FERROELECTRIC MEMORY AND STORAGE DEVICE
Simplified Explanation
A ferroelectric memory patent application describes a memory device with storage cells that include transistors, ferroelectric capacitors, and voltage divider capacitors. The transistors have gate, source, and drain electrodes, with the gate electrode connected to one electrode of the ferroelectric capacitor. The other electrode of the ferroelectric capacitor is connected to a word line, while one electrode of each voltage divider capacitor is connected to the gate electrode, and the other electrode is connected to the source electrode.
- Transistors, ferroelectric capacitors, and voltage divider capacitors are used in the storage cells of the memory device.
- The gate electrode of the transistor is connected to one electrode of the ferroelectric capacitor.
- The other electrode of the ferroelectric capacitor is connected to a word line.
- Each voltage divider capacitor has one electrode connected to the gate electrode and the other electrode connected to the source electrode.
Potential Applications
The technology described in this patent application could be used in various memory devices, such as non-volatile memory, embedded memory in microcontrollers, and other electronic devices requiring fast and reliable memory storage.
Problems Solved
This technology solves the problem of data loss in memory devices by utilizing ferroelectric capacitors, which can retain data even when power is turned off. Additionally, the use of voltage divider capacitors helps in maintaining stable voltage levels for proper operation of the memory cells.
Benefits
The benefits of this technology include faster access times, lower power consumption, and increased reliability due to the use of ferroelectric capacitors. The memory cells can retain data without the need for constant power supply, making them suitable for various applications.
Potential Commercial Applications
- "Innovative Memory Technology for Enhanced Data Retention and Performance"
Possible Prior Art
There are existing patents related to ferroelectric memory technologies, such as those describing different configurations of ferroelectric capacitors in memory cells. However, this specific combination of transistors, ferroelectric capacitors, and voltage divider capacitors may be a novel approach to improving memory performance and reliability.
Unanswered Questions
How does this technology compare to existing non-volatile memory solutions in terms of speed and power consumption?
This article does not provide a direct comparison with other non-volatile memory solutions, so it is unclear how this technology stacks up against alternatives in terms of speed and power efficiency.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the scalability of this technology for mass production, leaving questions about potential challenges in manufacturing processes and cost implications.
Original Abstract Submitted
a ferroelectric memory includes at least one storage cell. each storage cell includes a transistor, a first ferroelectric capacitor, and at least one voltage divider capacitor. the transistor includes a gate electrode, a source electrode, and a drain electrode. one electrode of the first ferroelectric capacitor is connected to the gate electrode. the other electrode of the first ferroelectric capacitor is connected to a word line. one electrode of each voltage divider capacitor in the at least one voltage divider capacitor is connected to the gate electrode, and the other electrode of each voltage divider capacitor in the at least one voltage divider capacitor is connected to the source electrode.
