17830100. SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY simplified abstract (Micron Technology, Inc.)
SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY
Organization Name
Inventor(s)
Angelo Visconti of Appiano Gentile (CO) (IT)
SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17830100 titled 'SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY
Simplified Explanation
The patent application describes methods, systems, and devices for recovering the imprint of memory cells. The imprint recovery procedure involves applying recovery pulses to memory cells with different voltage magnitudes. The first portion of each recovery pulse imposes a saturation polarization on the memory cell, while the second portion maintains the saturation polarization to prevent a reduction of polarization.
- The patent application focuses on switch and hold biasing for memory cell imprint recovery.
- The imprint recovery procedure includes applying recovery pulses to memory cells.
- Each recovery pulse has a first portion with a high voltage magnitude and a second portion with a lower voltage magnitude.
- The first voltage magnitude imposes a saturation polarization on the memory cell.
- The second voltage magnitude is high enough to maintain the saturation polarization of the memory cell.
- The recovery pulses are associated with a specific voltage polarity.
- The method prevents a reduction of polarization in the memory cell.
Potential Applications
This technology has potential applications in the following areas:
- Memory devices and systems
- Non-volatile memory technologies
- Ferroelectric capacitors
Problems Solved
The technology addresses the following problems:
- Imprint recovery in memory cells
- Reduction of polarization in memory cells
- Maintaining saturation polarization in memory cells
Benefits
The technology offers the following benefits:
- Improved recovery of imprint in memory cells
- Prevention of polarization reduction
- Enhanced performance and reliability of memory devices
Original Abstract Submitted
Methods, systems, and devices for switch and hold biasing for memory cell imprint recovery are described. A memory device may be configured to perform an imprint recovery procedure that includes applying one or more recovery pulses to memory cells, where each recovery pulse is associated with a voltage polarity and includes a first portion with a first voltage magnitude and a second portion with a second voltage magnitude that is lower than the first voltage magnitude. In some examples, the first voltage magnitude may correspond to a voltage that imposes a saturation polarization on a memory cell (e.g., on a ferroelectric capacitor, a polarization corresponding to the associated voltage polarity) and the second voltage magnitude may correspond to a voltage magnitude that is high enough to maintain the saturation polarization (e.g., to prevent a reduction of polarization) of the memory cell.
