18516908. INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yi-Ching Liu of Hsinchu City (TW)
Sai-Hooi Yeong of Hsinchu County (TW)
Yu-Ming Lin of Hsinchu City (TW)
INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516908 titled 'INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE
Simplified Explanation
The integrated circuit described in the patent application includes a three-dimensional memory device, first and second word line driving circuits, and stacking structures with word lines extending along a column direction.
- The three-dimensional memory device consists of stacking structures with word lines stacked vertically.
- Each stacking structure has first and second staircase structures on opposite sides, with word lines extending to steps on these structures.
- The first and second word line driving circuits are located below the memory device, extending along the respective sides.
- Word lines from each stacking structure are routed to either the first or second word line driving circuit based on their location on the staircase structures.
Potential Applications
- Data storage devices
- High-speed computing systems
- Mobile devices with increased memory capacity
Problems Solved
- Increased memory density
- Improved data access speeds
- Enhanced overall performance of electronic devices
Benefits
- Higher storage capacity in a compact space
- Faster data retrieval and processing
- Enhanced efficiency in electronic devices
Original Abstract Submitted
An integrated circuit is provided. The integrated circuit includes a three-dimensional memory device, a first word line driving circuit and a second word line driving circuit. The three-dimensional memory device includes stacking structures separately extending along a column direction. Each stacking structure includes a stack of word lines. The stacking structures have first staircase structures at a first side and second staircase structures at a second side. The word lines extend to steps of the first and second staircase structures. The first and second word line driving circuits lie below the three-dimensional memory device, and extend along the first and second sides, respectively. Some of the word lines in each stacking structure are routed to the first word line driving circuit from a first staircase structure, and others of the word lines in each stacking structure are routed to the second word line driving circuit from a second staircase structure.
