17957591. SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-CAPACITOR DEVICES simplified abstract (Intel Corporation)

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-CAPACITOR DEVICES

Organization Name

Intel Corporation

Inventor(s)

Nazila Haratipour of Portland OR (US)

Christopher Neumann of Portland OR (US)

Brian Doyle of Portland OR (US)

Sou-Chi Chang of Portland OR (US)

Bernal Granados Alpizar of Beaverton OR (US)

Sarah Atanasov of Beaverton OR (US)

Matthew Metz of Portland OR (US)

Uygar Avci of Portland OR (US)

Jack Kavalieros of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-CAPACITOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17957591 titled 'SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-CAPACITOR DEVICES

Simplified Explanation

The memory device described in the patent application includes a group of ferroelectric capacitors with a shared plate that extends through the ferroelectric capacitors and is coupled to an access transistor. The shared plate may be vertically positioned between ferroelectric layers of the capacitors at its greatest width. The process of forming the group of ferroelectric capacitors involves creating an opening through an alternating stack of insulators and conductive plates, selectively depositing ferroelectric material on the conductive plates, and forming a shared plate in the opening over the ferroelectric material.

• Group of ferroelectric capacitors with shared plate
• Shared plate extends through capacitors and is coupled to access transistor
• Shared plate positioned vertically between ferroelectric layers
• Process involves creating opening through insulators and plates, depositing ferroelectric material, and forming shared plate

Potential Applications

The technology described in the patent application could be applied in:

• Non-volatile memory devices
• Embedded memory in integrated circuits
• High-speed data storage systems

Problems Solved

This technology addresses the following issues:

• Improving memory device performance
• Enhancing data retention capabilities
• Reducing power consumption in memory devices

Benefits

The benefits of this technology include:

• Increased memory device efficiency
• Enhanced reliability of data storage
• Lower power consumption for longer battery life

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Automotive systems
• Industrial automation

Possible Prior Art

One possible prior art related to this technology is the use of ferroelectric capacitors in memory devices for data storage applications. Researchers have been exploring the use of ferroelectric materials to improve the performance and reliability of memory devices.

How does this technology compare to existing memory devices in terms of speed and data retention capabilities?

The article does not provide a direct comparison between this technology and existing memory devices in terms of speed and data retention capabilities. Further research or testing would be needed to determine how this technology stacks up against current memory technologies.

What are the potential challenges in scaling up this technology for mass production?

The article does not address the potential challenges in scaling up this technology for mass production. Factors such as cost, manufacturing processes, and compatibility with existing systems could present obstacles that need to be explored further.

Original Abstract Submitted

A memory device includes a group of ferroelectric capacitors with a shared plate that extends through the ferroelectric capacitors, has a greatest width between ferroelectric capacitors, and is coupled to an access transistor. The shared plate may be vertically between ferroelectric layers of the ferroelectric capacitors at the shared plate's greatest width. The memory device may include an integrated circuit die and be coupled to a power supply. Forming a group of ferroelectric capacitors includes forming an opening through an alternating stack of insulators and conductive plates, selectively forming ferroelectric material on the conductive plates rather than the insulators, and forming a shared plate in the opening over the ferroelectric material.