18525301. ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chih-Sheng Chang of Hsinchu (TW)
ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525301 titled 'ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS
Simplified Explanation
The semiconductor device described in the abstract is a ferroelectric field-effect transistor (FeFET) with a gate structure that includes a ferroelectric film.
- The FeFET includes a substrate, source region, drain region, and gate structure.
- The gate structure consists of a gate dielectric layer, ferroelectric film, and gate electrode.
Potential Applications
The technology of ferroelectric field-effect transistors (FeFETs) can be applied in various fields such as:
- Non-volatile memory devices
- Low-power logic circuits
- Sensor applications
Problems Solved
This technology helps in addressing several issues, including:
- High power consumption in traditional transistors
- Limited data retention in volatile memory devices
- Slow switching speeds in certain applications
Benefits
The benefits of using FeFETs include:
- Lower power consumption
- Faster switching speeds
- Improved data retention capabilities
Potential Commercial Applications
The potential commercial applications of FeFET technology can be seen in:
- Consumer electronics
- Internet of Things (IoT) devices
- Automotive electronics
Possible Prior Art
One example of prior art in this field is the use of ferroelectric materials in memory devices, such as FeRAM (Ferroelectric Random Access Memory). These devices have been used for non-volatile memory applications but may not have the same structure as the FeFET described in the patent application.
Unanswered Questions
How does the performance of FeFETs compare to traditional transistors in terms of speed and power consumption?
FeFETs are known for their low power consumption and fast switching speeds, but specific performance metrics compared to traditional transistors may vary based on the application.
What are the challenges in scaling up FeFET technology for mass production?
While FeFETs show promise in various applications, scaling up production and ensuring consistent performance across large volumes may pose challenges that need to be addressed.
Original Abstract Submitted
A semiconductor device includes a ferroelectric field-effect transistor (FeFET), wherein the FeFET includes a substrate; a source region in the substrate; a drain region in the substrate; and a gate structure over the substrate and between the source region and the drain region. The gate structure includes a gate dielectric layer over the substrate; a ferroelectric film over the gate dielectric layer; and a gate electrode over the ferroelectric film.
