Taiwan semiconductor manufacturing company, ltd. (20240114691). ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract

ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Sheng Chang of Hsinchu (TW)

ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114691 titled 'ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS

Simplified Explanation

The semiconductor device described in the patent application is a ferroelectric field-effect transistor (FeFET) with specific components and layers that enable its operation.

• The device includes a substrate, source region, drain region, and gate structure.
• The gate structure consists of a gate dielectric layer, a ferroelectric film, and a gate electrode.

• • Potential Applications:**

This technology could be used in memory devices, logic circuits, and sensors due to its unique properties and performance.

• • Problems Solved:**

This technology addresses the need for faster, more efficient, and reliable semiconductor devices in various electronic applications.

• • Benefits:**

The FeFET offers improved performance, lower power consumption, and enhanced reliability compared to traditional transistors.

• • Potential Commercial Applications:**

"Enhancing Semiconductor Devices with FeFET Technology"

• • Possible Prior Art:**

One example of prior art in this field is the use of non-ferroelectric field-effect transistors in semiconductor devices.

• • Unanswered Questions:**

1. How does the ferroelectric film impact the overall performance of the FeFET compared to traditional transistors? 2. Are there any limitations or challenges associated with integrating FeFET technology into existing semiconductor manufacturing processes?

Original Abstract Submitted

a semiconductor device includes a ferroelectric field-effect transistor (fefet), wherein the fefet includes a substrate; a source region in the substrate; a drain region in the substrate; and a gate structure over the substrate and between the source region and the drain region. the gate structure includes a gate dielectric layer over the substrate; a ferroelectric film over the gate dielectric layer; and a gate electrode over the ferroelectric film.