Taiwan semiconductor manufacturing co., ltd. (20240097032). METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract
Contents
- 1 METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097032 titled 'METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE
Simplified Explanation
The abstract describes a method for writing to a ferroelectric field-effect transistor (FeFET) configured as a 2-bit storage device. The method involves setting the second bit to a logical 1 value by applying a gate voltage to the gate terminal and a first source/drain voltage to the second source/drain terminal, where the first source/drain voltage is lower than the gate voltage.
- Setting the second bit to a logical 1 value in a FeFET storage device
- Applying a gate voltage to the gate terminal
- Applying a first source/drain voltage to the second source/drain terminal
Potential Applications
The technology described in the patent application could be applied in:
- Non-volatile memory devices
- Low-power electronics
Problems Solved
This technology helps in:
- Increasing data storage capacity in a compact device
- Reducing power consumption in electronic devices
Benefits
The benefits of this technology include:
- Enhanced data storage efficiency
- Improved energy efficiency in electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- IoT devices
Possible Prior Art
One possible prior art for this technology could be:
- Research on FeFET devices for memory applications
Unanswered Questions
How does this technology compare to traditional non-volatile memory devices?
This article does not provide a direct comparison between this technology and traditional non-volatile memory devices.
What are the long-term reliability implications of using this technology in electronic devices?
This article does not address the long-term reliability implications of using this technology in electronic devices.
Original Abstract Submitted
a method (of writing to a ferroelectric field-effect transistor (fefet) configured as a 2-bit storage device that stores two bits, wherein the fefet includes a first source/drain (s/d) terminal, a second s/d terminal, a gate terminal and a ferroelectric layer, a second bit being at a first end of the ferroelectric layer, the first end being proximal to the first s/d terminal) includes: setting the second bit to a logical 1 value, the setting a second bit including applying a gate voltage to the gate terminal, and applying a first source/drain voltage to the second s/d terminal; and wherein the first source/drain voltage is lower than the gate voltage.
