17840003. FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei Ting Hsieh of Hsinchu (TW)
Kuo-Ching Huang of Hsinchu (TW)
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW - A simplified explanation of the abstract
This abstract first appeared for US patent application 17840003 titled 'FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW
Simplified Explanation
The patent application describes a semiconductor device that uses a ferroelectric film to alter the effective resistance through the device. This is achieved by applying different voltages across the device.
- The device includes a first capacitor with a ferroelectric film between two electrodes.
- A first voltage is applied to polarize the ferroelectric film, changing the resistance.
- A second voltage is applied to cause a leakage current to accumulate along an electrode of a second capacitor and the gate of a transistor.
- This accumulation affects the drain to source resistance of the transistor, which can be measured to determine the polarization state of the ferroelectric film.
Potential Applications
- Memory devices: The ability to measure the polarization state of the ferroelectric film can be used in non-volatile memory applications.
- Sensor devices: The change in resistance can be utilized in sensor devices for various applications such as pressure, temperature, or gas sensing.
Problems Solved
- Non-volatile memory: The ability to determine the polarization state of the ferroelectric film allows for reliable and efficient non-volatile memory storage.
- Sensor accuracy: The change in resistance can provide more accurate and sensitive measurements in sensor devices.
Benefits
- Improved memory performance: The use of ferroelectric film allows for faster and more efficient memory operations.
- Enhanced sensor sensitivity: The change in resistance provides higher sensitivity and accuracy in sensor measurements.
- Compact design: The semiconductor device can be integrated into a compact form factor, making it suitable for various applications.
Original Abstract Submitted
A semiconductor device includes a first capacitor having a ferroelectric film disposed between two electrodes, a second capacitor, having another dielectric film disposed between two electrodes. A first voltage is applied across the first capacitor such that the ferroelectric film is polarized, altering the effective resistance through the device. A second voltage is applied across the first capacitor, such that a leakage current transits the ferroelectric film, and accumulates along an electrode of the second capacitor, and the gate of a transistor, thereby effecting a change to the drain to source resistance of the transistor which may be measured to determine the polarization state of the ferroelectric film.
