Taiwan Semiconductor Manufacturing Company, Ltd. patent applications published on October 12th, 2023

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Summary of the patent applications from Taiwan Semiconductor Manufacturing Company, Ltd. on October 12th, 2023

Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC) has recently filed several patents related to semiconductor devices and memory technologies. These patents cover various aspects of device structures, materials, and fabrication processes. Here is a summary of the recent patents filed by TSMC:

- Patent 1: A semiconductor device that includes a transistor and an interconnect structure. The interconnect structure consists of multiple interlayer dielectric layers, a via, and a memory cell. The memory cell is connected to the via and positioned over the interlayer dielectric layers.

- Patent 2: A ferroelectric memory device that includes a bottom electrode, a ferroelectric structure, and a top electrode. The bottom electrode is made of molybdenum.

- Patent 3: An integrated chip that includes a gate electrode, a gate dielectric layer made of a ferroelectric material, an active structure made of a semiconductor material, and a capping structure made of a metal material.

- Patent 4: A memory device that includes a word line, a gate dielectric layer, a semiconductor layer, a source line, and a resistance-switchable element. The word line is located on top of a substrate, and the resistance-switchable element is in contact with the semiconductor layer.

- Patent 5: A ferroelectric memory device that includes multiple layers stacked on a substrate. These layers include conductive and dielectric layers arranged alternately, with a ferroelectric layer placed between them. Oxygen scavenging layers act as a barrier between the ferroelectric layer and the conductive layers.

- Patent 6: A method for creating a memory device that involves forming stacks of word lines and insulating layers on a semiconductor substrate, creating a data storage layer and a channel layer on the sidewalls of the word line stacks, and forming source/drain contacts.

- Patent 7: A semiconductor memory device that includes metal lines and memory arrays. Each memory array includes two sets of thin film transistors (TFTs) connected in parallel, and switch transistors connected in series to the TFTs and metal lines.

- Patent 8: A memory device that includes multiple layers of gate electrodes and interconnects on a substrate. The device includes a first memory cell with source/drain conductive lines and a channel layer and memory layer on the sides of these lines.

- Patent 9: A system for generating a pulse width modulation (PWM) signal with a specific duty cycle. The system includes a square wave generator, a logic device, and multiple square wave signals.

- Patent 10: A device for electrostatic discharge (ESD) protection that includes an ESD detector, P-type and N-type transistors connected in series, a drive circuit, and protection circuits operating in different power domains.

Notable applications:

  • Memory devices with improved performance and reliability.
  • Ferroelectric memory devices with enhanced electrode materials.
  • Integrated chips with ferroelectric gate dielectric layers.
  • Memory devices with resistance-switchable elements.
  • Memory devices with stacked layers and oxygen scavenging layers.
  • Methods for fabricating memory devices with improved process efficiency.
  • Semiconductor memory devices with parallel thin film transistors.
  • Memory devices with barrier structures for improved performance.
  • Systems for generating PWM signals with specific duty cycles.
  • ESD protection devices with improved circuitry and power domain control.



Contents

Patent applications for Taiwan Semiconductor Manufacturing Company, Ltd. on October 12th, 2023

APPARATUS FOR OPTICAL COUPLING AND SYSTEM FOR COMMUNICATION (18334386)

Main Inventor

Feng-Wei Kuo


PELLICLE FRAME WITH STRESS RELIEF TRENCHES (18335232)

Main Inventor

Kuo-Hao LEE


PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN (18208794)

Main Inventor

Li-Po YANG


METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM (18326354)

Main Inventor

Chi YANG


EUV LITHOGRAPHY APPARATUS AND OPERATING METHOD FOR MITIGATING CONTAMINATION (17717709)

Main Inventor

I-Hsiung HUANG


METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM FOR SAME (18335505)

Main Inventor

Ke-Ying SU


METHOD FOR NEURAL NETWORK WITH WEIGHT QUANTIZATION (17719294)

Main Inventor

Kea Tiong TANG


Low Power Scheme for Power Down in Integrated Dual Rail SRAMs (18328836)

Main Inventor

Sanjeev Kumar Jain


MEMORY DEVICE (18336428)

Main Inventor

He-Zhou WAN


MEMORY DEVICE FOR REDUCING ACTIVE POWER (18336418)

Main Inventor

Tsung-Hsien HUANG


SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF (18336386)

Main Inventor

Peng-Chun Liou


MEMORY DEVICE AND OPERATION METHOD THEREOF (17715959)

Main Inventor

Jer-Fu Wang


Sram Performance Optimization Via Transistor Width And Threshold Voltage Tuning (18336304)

Main Inventor

Jhon Jhy Liaw


MEMORY DEVICE AND SYSTEM (17716609)

Main Inventor

Yu-Der CHIH


BIT LINE AND WORD LINE CONNECTION FOR MEMORY ARRAY (18332058)

Main Inventor

Chang-Chih Huang


MEMORY ARRAY, MEMORY STRUCTURE AND OPERATION METHOD OF MEMORY ARRAY (17715964)

Main Inventor

Kerem Akarvardar


SEMICONDUCTOR BURIED LAYER (18203849)

Main Inventor

Hung-Te Lin


METHOD FOR FORMING SEMICONDUCTOR STRUCTURE (18333100)

Main Inventor

Yu-Chen CHANG


WAFER TRANSFER SYSTEM AND A METHOD FOR TRANSPORTING WAFERS (17894862)

Main Inventor

Ren-Hau Wu


SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME (17719040)

Main Inventor

Fan-Cheng LIN


SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT (18333124)

Main Inventor

Wen-Sheh HUANG


SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (17715967)

Main Inventor

Chia-Cheng Chao


WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES (17815884)

Main Inventor

Shahaji B. More


SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF (18205538)

Main Inventor

Shahaji B. More


METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS (18335065)

Main Inventor

Chun-Hung Chen


DAISY-CHAIN SEAL RING STRUCTURE (18335413)

Main Inventor

Chun-Liang LU


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (18334381)

Main Inventor

Wensen Hung


INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME (18334136)

Main Inventor

Chih-Liang CHEN


INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL (17716485)

Main Inventor

Meng-Pei LU


PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME (18328913)

Main Inventor

Po-Chen LAI


TRANSMISSION LINE STRUCTURE FOR RF SIGNAL (17716050)

Main Inventor

Hsiu-Ying CHO


SEMICONDUCTOR PACKAGE INCLUDING SOIC DIE STACKS (17714147)

Main Inventor

Jen-Yuan Chang


3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS (17848815)

Main Inventor

Yao-Chung Chang


PACKAGE STRUCTURE AND METHOD OF FORMING THE SAME (18334390)

Main Inventor

Po-Yao Lin


ISOLATION STRUCTURE CONFIGURED TO REDUCE CROSS TALK IN IMAGE SENSOR (17861708)

Main Inventor

Cheng-Ying Ho


METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING (17658732)

Main Inventor

Yuan-Sheng HUANG


CONTACT FIELD PLATE (17715900)

Main Inventor

Tao-Cheng Liu


INNER SPACER FOR SEMICONDUCTOR DEVICE (17716192)

Main Inventor

Fu-Ting YEN


BUFFER EPITAXIAL REGION IN SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD OF THE SAME (18163649)

Main Inventor

Shahaji B. More


SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME (17717892)

Main Inventor

Ta-Chun LIN


METHOD OF FORMING SEMICONDUCTOR DEVICE (17714630)

Main Inventor

Chieh-Wei CHEN


INTEGRATED CIRCUIT, TRANSISTOR AND METHOD OF FABRICATING THE SAME (18336044)

Main Inventor

Yu-Wei Jiang


SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME (18333982)

Main Inventor

Shu-Jui CHANG


FeFET OF 3D STRUCTURE FOR CAPACITANCE MATCHING (18331241)

Main Inventor

Hung-Li Chiang


ELECTROSTATIC DISCHARGE PROTECTION (17865809)

Main Inventor

Chia-Hui Chen


Pulse Width Control Apparatus and Method (17836046)

Main Inventor

Yi-An Lai


PROTECTIVE LINER LAYERS IN 3D MEMORY STRUCTURE (18336252)

Main Inventor

Tsu Ching Yang


SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME (17716517)

Main Inventor

Meng-Han LIN


HIGH SELECTIVITY ISOLATION STRUCTURE FOR IMPROVING EFFECTIVENESS OF 3D MEMORY FABRICATION (18334590)

Main Inventor

Tsu Ching Yang


FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME (18336105)

Main Inventor

Chun-Chieh Lu


MEMORY DEVICE AND FORMING METHOD THEREOF (17718071)

Main Inventor

Meng-Han LIN


CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY (18335167)

Main Inventor

Rainer Yen-Chieh Huang


MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE (17705653)

Main Inventor

Harry-Hak-Lay Chuang


MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE (18333498)

Main Inventor

Carlos H. Diaz

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