US Patent Application 18336418. MEMORY DEVICE FOR REDUCING ACTIVE POWER simplified abstract
Contents
MEMORY DEVICE FOR REDUCING ACTIVE POWER
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsung-Hsien Huang of Hsinchu City (TW)
Wei-Jer Hsieh of Hsinchu City (TW)
Yu-Hao Hsu of Tainan City (TW)
MEMORY DEVICE FOR REDUCING ACTIVE POWER - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336418 Titled 'MEMORY DEVICE FOR REDUCING ACTIVE POWER'
Simplified Explanation
This abstract describes a memory device that consists of several components. The first memory cell receives a signal called the first word line signal. The first tracking cell is designed to imitate the behavior of the first memory cell. The tracking bit line is responsible for transmitting a signal called the tracking bit line signal to the first tracking cell. The second tracking cell adjusts the tracking bit line signal based on the first word line signal. The word line driver adjusts the first word line signal based on the tracking bit line signal and the distance between the second tracking cell and a common node on the tracking bit line.
Original Abstract Submitted
A memory device including a first memory cell, a first tracking cell, a tracking bit line, a second tracking cell and a word line driver. The first memory cell is configured to receive a first word line signal. The first tracking cell is configured to emulate the first memory cell. The tracking bit line is configured to transmit a tracking bit line signal to the first tracking cell. The second tracking cell is configured to adjust the tracking bit line signal according to the first word line signal. The word line driver is configured to adjust the first word line signal according to the tracking bit line signal and a first distance between the second tracking cell and a common node on the tracking bit line.
