US Patent Application 17717709. EUV LITHOGRAPHY APPARATUS AND OPERATING METHOD FOR MITIGATING CONTAMINATION simplified abstract
Contents
EUV LITHOGRAPHY APPARATUS AND OPERATING METHOD FOR MITIGATING CONTAMINATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
I-Hsiung Huang of Hsinchu (TW)
Yung-Cheng Chen of Jhubei City (TW)
Tung-Li Wu of Hsinchu City (TW)
EUV LITHOGRAPHY APPARATUS AND OPERATING METHOD FOR MITIGATING CONTAMINATION - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17717709 Titled 'EUV LITHOGRAPHY APPARATUS AND OPERATING METHOD FOR MITIGATING CONTAMINATION'
Simplified Explanation
The abstract describes an apparatus used in extreme ultra violet (EUV) lithography. It consists of a light source that produces an EUV light beam, a scanner that receives the light from the light source and directs it to a reticle stage, and a debris catcher positioned on the EUV beam path between the light source and the scanner. The debris catcher is made up of a network membrane that contains numerous nano-fibers.
Original Abstract Submitted
An extreme ultra violet (EUV) lithography apparatus includes a light source that generates an EUV light beam, a scanner that receives the light from a junction with the light source and directs the light to a reticle stage, and a debris catcher disposed on a EUV beam path between the light source and the scanner. The debris catcher includes a network membrane including a plurality of nano-fibers.
