US Patent Application 18333100. METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract
Contents
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chien-Wen Lai of Hsinchu City (TW)
Chih-Min Hsiao of Taoyuan (TW)
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18333100 Titled 'METHOD FOR FORMING SEMICONDUCTOR STRUCTURE'
Simplified Explanation
This abstract describes a method for creating a semiconductor structure. The process involves several steps, including the formation of mandrels over a target layer. These mandrels are then cut off to create openings. A spacer layer is then formed over the remaining mandrels. Additional mandrels are formed between the first set of mandrels, and one of them is cut off to create another opening. The spacer layer is then etched, followed by the etching of the target layer.
Original Abstract Submitted
A method for forming a semiconductor structure includes forming first mandrels over a target layer. The method for forming a semiconductor structure also includes forming a first opening to cut off one of the first mandrels. The method for forming a semiconductor structure also includes forming a spacer layer over the first mandrels. The method for forming a semiconductor structure also includes forming second mandrels over the spacer layer and between the first mandrels. The method for forming a semiconductor structure also includes forming a second opening to cut off one of the second mandrels. The method for forming a semiconductor structure also includes etching the spacer layer. The method for forming a semiconductor structure also includes etching the target layer.
