US Patent Application 18208794. PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN simplified abstract
Contents
PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wei-Han Lai of New Taipei City (TW)
Ching-Yu Chang of Yuansun Village (TW)
PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18208794 Titled 'PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN'
Simplified Explanation
The abstract describes a method for creating a pattern in a photoresist layer on a substrate. The process involves applying a photoresist layer containing a polymer onto the substrate. The photoresist layer is then selectively exposed to actinic radiation, which creates a hidden pattern. This latent pattern is then developed by applying a developer, which reveals the desired pattern on the photoresist layer.
Original Abstract Submitted
Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer:
