US Patent Application 18203849. SEMICONDUCTOR BURIED LAYER simplified abstract
Contents
SEMICONDUCTOR BURIED LAYER
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hung Chih Yu of Hsinchu City (TW)
SEMICONDUCTOR BURIED LAYER - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18203849 Titled 'SEMICONDUCTOR BURIED LAYER'
Simplified Explanation
The abstract describes a method for manufacturing semiconductors. A mask is placed on a semiconductor layer or substrate, and the area underneath the mask is etched to create a cavity. The cavity is then lined to create a containment structure. The containment structure is filled with a base semiconductor material, and then the mask is removed. Finally, at least one semiconductor device is made on or inside the base semiconductor material in the containment structure.
Original Abstract Submitted
In a semiconductor manufacturing method, a mask is disposed on a semiconductor layer or semiconductor substrate. The semiconductor layer or semiconductor substrate is etched in an area delineated by the mask to form a cavity. With the mask disposed on the semiconductor layer or semiconductor substrate, the cavity is lined to form a containment structure. With the mask disposed on the semiconductor layer or semiconductor substrate, the containment structure is filled with a base semiconductor material. After filling the containment structure with the base semiconductor material, the mask is removed. At least one semiconductor device is fabricated in and/or on the base semiconductor material deposited in the containment structure.
