US Patent Application 17716192. INNER SPACER FOR SEMICONDUCTOR DEVICE simplified abstract
Contents
INNER SPACER FOR SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
INNER SPACER FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17716192 Titled 'INNER SPACER FOR SEMICONDUCTOR DEVICE'
Simplified Explanation
The abstract describes a device that contains a semiconductor unit. This unit includes a first source/drain portion, a second source/drain portion, and at least one nanosheet segment that connects the first and second source/drain portions. The device also has a gate portion surrounding the nanosheet segment, as well as two inner spacer portions that separate the gate portion from the source/drain portions. These inner spacer portions have a carbon-rich region that faces the gate portion.
Original Abstract Submitted
A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.
