US Patent Application 17716050. TRANSMISSION LINE STRUCTURE FOR RF SIGNAL simplified abstract

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TRANSMISSION LINE STRUCTURE FOR RF SIGNAL

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Hsiu-Ying Cho of Hsin Chu City (TW)


TRANSMISSION LINE STRUCTURE FOR RF SIGNAL - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17716050 Titled 'TRANSMISSION LINE STRUCTURE FOR RF SIGNAL'

Simplified Explanation

The abstract describes the design of transmission line structures. These structures consist of two conductive lines that are formed on a semiconductor substrate and extend in a certain direction. The first transmission line is made up of a main line, as well as several sub-lines that extend towards the first and second conductive lines. Between the sub-lines and the conductive lines, there are zones of dielectric material. These dielectric material zones are separated from the conductive lines and the transmission line by an insulation material. The insulation material has a lower dielectric constant than the dielectric material zones.


Original Abstract Submitted

Transmission line structures are provided. The first and second conductive lines are formed in a metal layer over the semiconductor substrate and extend in a first direction. The first transmission line includes a first sub-line extending in the first direction, a plurality of second sub-lines extending toward the first conductive line, and a plurality of third sub-lines extending toward the second conductive line. The first dielectric material zones are formed between the second sub-lines and the first conductive line. The second dielectric material zones are formed between the third sub-lines and the second conductive line. The first and second dielectric material zones are separated from the first and second conductive lines and the first transmission line by an insulation material. Dielectric constant of the insulation material is less than that of the first and second dielectric material zones.

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