US Patent Application 17717892. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ming-Che Chen of Taipei City (TW)
Chun-Jun Lin of Hsinchu City (TW)
Kuo-Hua Pan of Hsinchu City (TW)
Jhon-Jhy Liaw of Taipei City (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17717892 Titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME'
Simplified Explanation
This abstract describes a method for creating a semiconductor device structure. The method involves several steps, including forming a gate stack on a substrate, creating a spacer structure on the side of the gate stack, and forming a source/drain structure on the substrate. The spacer structure is positioned between the source/drain structure and the gate stack. The method also involves partially removing the outer layer and the middle layer, leaving behind lower portions of each layer between the source/drain structure and the gate stack.
Original Abstract Submitted
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer structure over a sidewall of the gate stack. The method includes forming a source/drain structure in and over the substrate, wherein a portion of the spacer structure is between the source/drain structure and the gate stack. The method includes partially removing the outer layer, wherein a first lower portion of the outer layer remains between the source/drain structure and the gate stack. The method includes partially removing the middle layer, wherein a second lower portion of the middle layer remains between the source/drain structure and the gate stack.
