US Patent Application 18334136. INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Liang Chen of Hsinchu (TW)
INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18334136 Titled 'INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME'
Simplified Explanation
This abstract describes a semiconductor device that includes various components such as a substrate, a gate structure, source/drain structures, a backside via, and a power rail. The gate structure and the source/drain structures are positioned parallel to the front-side surface of the substrate. The backside via, on the other hand, runs perpendicular to the gate structure and source/drain structures. The backside via has two portions - one aligned with the source/drain structures and the other aligned with the gate structure. The first portion of the backside via has a wider width along the direction of the gate structure compared to the second portion. The power rail is located on the backside surface of the substrate and is connected to the backside via.
Original Abstract Submitted
A semiconductor device includes a substrate, a gate structure, source/drain structures, a backside via, and a power rail. The gate structure extends along a first direction parallel with a front-side surface of the substrate. The backside via extends along a second direction parallel with the front-side surface of the substrate but perpendicular to the first direction, the backside via has a first portion aligned with one of the source/drain structures along the first direction and a second portion aligned with the gate structure along the first direction, the first portion of the backside via has a first width along the first direction, and the second portion of the backside via has a second width along the first direction, in which the first width is greater than the second width. The power rail is on a backside surface of the substrate and in contact with the backside via.
