US Patent Application 17715900. CONTACT FIELD PLATE simplified abstract
Contents
CONTACT FIELD PLATE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ying-Hsun Chen of Hsinchu (TW)
CONTACT FIELD PLATE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17715900 Titled 'CONTACT FIELD PLATE'
Simplified Explanation
The abstract describes a semiconductor device and a method for creating it. The method involves placing two conductive structures on a semiconductor substrate and adding one or more dielectric layers between them. These dielectric layers are then covered with a masking layer. An opening is created in this masking layer, and a conductive material is deposited into the opening to create a field plate structure. Finally, this field plate structure is connected to another conductor.
Original Abstract Submitted
A semiconductor device and method of forming the semiconductor device are disclosed. The method includes forming first and second conductive structures on a semiconductor substrate, forming one or more dielectric layers between the first and second conductive structures, covering the one or more dielectric layers with a first masking layer, forming a first opening in the first masking layer, depositing a conductive material in the first opening to form a field plate structure, and electrically connecting the field plate structure to another conductor.
