US Patent Application 17658732. METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING simplified abstract

METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yuan-Sheng Huang of Taichung City (TW)

Kaochao Chen of Hsinchu City (TW)

METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 17658732 Titled 'METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING'

Simplified Explanation

This abstract describes techniques and apparatuses for creating a semiconductor device with a metal-insulator-metal capacitor. The capacitor includes a dielectric pad layer that is positioned between a bottom metal electrode layer and a portion of an insulator layer. The purpose of the dielectric pad layer is to maintain the thickness of the insulator layer, which helps to prevent leakage between the top and bottom metal electrode layers. Additionally, the dielectric pad layer allows for a reduction in the thickness of the insulator layer, which in turn increases the capacitance of the metal-insulator-metal capacitor.

Original Abstract Submitted

Some implementations described herein provide techniques and apparatuses for forming a semiconductor device including a metal-insulator-metal capacitor. The metal-insulator-metal capacitor includes a dielectric pad layer having a portion between a capacitor bottom metal electrode layer and a portion of an insulator layer. The dielectric pad layer may preserve a thickness of the insulator layer to reduce a likelihood of a leakage between a capacitor top metal electrode layer and the capacitor bottom metal electrode layer. The dielectric pad layer may also enable a reduction in a thickness of the insulator layer to increase a capacitance of the metal-insulator-metal capacitor.