US Patent Application 17815884. WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES simplified abstract

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WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Shahaji B. More of Hsinchu City (TW)


Cheng-Wei Chang of Taipei City (TW)


WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17815884 Titled 'WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES'

Simplified Explanation

The abstract describes a new type of structure for multigate devices, specifically the source/drain structures. These structures have a wavy shape and are made using epitaxial growth. The device includes two fins that run parallel to each other, with each fin having a recessed and non-recessed portion. A gate is placed along a different direction and wraps around the non-recessed portions of the fins. The recessed portions of the fins are then merged together to form a single epitaxial source/drain. A contact is placed on top of this merged source/drain, and there is a V-shaped interface between the contact and the merged source/drain. The contact also extends below the tops of the non-recessed portions of the fins.


Original Abstract Submitted

Wavy-shaped epitaxial source/drain structures for multigate devices and methods of fabrication thereof are disclosed herein. An exemplary device includes a first fin and a second fin extending lengthwise along a first direction. The first fin and the second fin each have a non-recessed portion and a recessed portion. A gate extends lengthwise along a second direction that is different than the first direction. The gate wraps the non-recessed portion of the first fin and the non-recessed portion of the second fin. A merged epitaxial source/drain is on the recessed portion of the first fin and the recessed portion of the second fin. A source/drain contact is on the merged epitaxial source/drain. The source/drain contact and the merged epitaxial source/drain have a V-shaped interface therebetween. The source/drain contact extends below tops of the non-recessed portions of the first fin and the second fin.

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