US Patent Application 17716609. MEMORY DEVICE AND SYSTEM simplified abstract

MEMORY DEVICE AND SYSTEM

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yu-Der Chih of Hsinchu City (TW)

Yun-Sheng Chen of Hsinchu County (TW)

Jonathan Tsung-Yung Chang of Hsinchu City (TW)

Hsin-Yuan Yu of Hsinchu County (TW)

Chrong Jung Lin of Hsinchu City (TW)

Ya-Chin King of Taipei City (TW)

MEMORY DEVICE AND SYSTEM - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 17716609 Titled 'MEMORY DEVICE AND SYSTEM'

Simplified Explanation

This abstract describes a memory device that consists of different components. It includes two active areas, each with a different type of doping. There are also two gate structures, one between the two active areas, which is used to store a specific bit of information. Another doped structure is present between the first doped structure and the second active area. This second doped structure, along with the first doped structure, receives a signal from the gate structure that corresponds to the stored bit of information.

Original Abstract Submitted

A memory device includes a first active area, a first doped structure of a first doping type, a second active area, a first gate structure and a second doped structure of a second doping type different from the first doping type. The second active area is disposed between the first active area and the first doped structure. The first gate structure is disposed between the first active area and the second active area in a layout view, and configured to store a first bit with the first active area and the second active area. The second doped structure is coupled to the first gate structure and disposed between the first doped structure and the second active area. The second doped structure and the first doped structure are configured to receive a first signal corresponding to the first bit from the first gate structure.