US Patent Application 18333124. SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wen-Sheh Huang of Hsinchu City (TW)
Hsiu-Wen Hsueh of Taichung City (TW)
Yu-Hsiang Chen of Hsinchu City (TW)
Chii-Ping Chen of Hsinchu City (TW)
SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18333124 Titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT'
Simplified Explanation
The abstract describes a semiconductor device structure that consists of multiple layers. It includes a first dielectric layer and two conductive features surrounded by the first dielectric layer. There is also a second dielectric layer on top of the first dielectric layer, and a resistive element is connected to one of the conductive features. The second dielectric layer surrounds a part of the resistive element. Additionally, there is a conductive via connected to the other conductive feature, and the second dielectric layer surrounds a part of the via. The contact area between the resistive element and the first conductive feature is wider than the contact area between the via and the second conductive feature.
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device structure includes a first dielectric layer and a first conductive feature and a second conductive feature surrounded by the first dielectric layer. The semiconductor device structure also includes a second dielectric layer over the first dielectric layer and a resistive element electrically connected to the first conductive feature. The second dielectric layer surrounds a portion of the resistive element. The semiconductor device structure further includes a conductive via electrically connected to the second conductive feature. The second dielectric layer surrounds a portion of the conductive via, and a contact area between the resistive element and the first conductive feature is wider than a contact area between the conductive via and the second conductive feature.
