US Patent Application 18336386. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Peng-Chun Liou of Hsinchu (TW)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336386 Titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF'
Simplified Explanation
This abstract describes a semiconductor device that has three conductive structures. The first and second conductive structures are positioned vertically and spaced apart horizontally. The device also has multiple third conductive structures that are placed across the first and second conductive structures. The first and second conductive structures have different widths along the horizontal direction. The third conductive structures are designed to be given different voltages based on the varying widths of the first and second conductive structures.
Original Abstract Submitted
A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures are configured to be applied with respective different voltages in accordance with the varying width of the first and second conductive structures.
