US Patent Application 17865809. ELECTROSTATIC DISCHARGE PROTECTION simplified abstract

ELECTROSTATIC DISCHARGE PROTECTION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Hui Chen of Hsinchu City (TW)

Chia-Jung Chang of Hsinchu City (TW)

ELECTROSTATIC DISCHARGE PROTECTION - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 17865809 Titled 'ELECTROSTATIC DISCHARGE PROTECTION'

Simplified Explanation

The abstract describes a device that provides protection against electrostatic discharge (ESD). The device includes an ESD detector that detects ESD at a pad. It also includes P-type and N-type transistors connected in series, as well as a drive circuit that provides an output signal to the pad. The device further includes a first protection circuit operating in a power domain, which disables the P-type transistors in response to the detected ESD. Additionally, there is a second protection circuit operating in another power domain, which disables the N-type transistors in response to the detected ESD.

Original Abstract Submitted

Disclosed herein are related to a device for electrostatic discharge (ESD) protection. In one aspect, a device includes an ESD detector to detect an ESD at a pad. In one aspect, the device includes P-type transistors and N-type transistors connected in series with each other. In one aspect, the drive circuit is configured to provide an output signal to the pad. In one aspect, the device includes a first protection circuit operating in a power domain. In one aspect, in response to the ESD detected by the ESD detector, the first protection circuit is configured to disable the P-type transistors. In one aspect, the device includes a second protection circuit operating in another power domain. In one aspect, in response to the ESD detected by the ESD detector, the second protection circuit is configured to disable the N-type transistors.