US Patent Application 18205538. SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shahaji B. More of Hsinchu (TW)
Chung-Hsien Yeh of Hsinchu (TW)
SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18205538 Titled 'SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF'
Simplified Explanation
The present disclosure describes methods for creating merged source/drain features by combining multiple fin structures. These merged features have a higher height percentage in a specific area, allowing for better connection with source/drain contact features and reducing resistance. Some embodiments also include voids within the merged portion.
Original Abstract Submitted
Embodiments of the present disclosure provide methods for forming merged source/drain features from two or more fin structures. The merged source/drain features according to the present disclosure have a merged portion with an increased height percentage over the overall height of the source/drain feature. The increase height percentage provides an increased landing range for source/drain contact features, therefore, reducing the connection resistance between the source/drain feature and the source/drain contact features. In some embodiments, the emerged source/drain features include one or more voids formed within the merged portion.
