US Patent Application 17715959. MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract
Contents
MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jer-Fu Wang of Taipei City (TW)
Hung-Li Chiang of Taipei City (TW)
Tzu-Chiang Chen of Hsinchu City (TW)
Meng-Fan Chang of Taichung City (TW)
MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17715959 Titled 'MEMORY DEVICE AND OPERATION METHOD THEREOF'
Simplified Explanation
The abstract describes a memory device that consists of memory cells, each containing a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell stores complementary data at two storage nodes. The non-volatile memory cell replicates and retains the data from the SRAM cell before it loses power. After the power supply is restored, the replicated data is rewritten back to the SRAM cell.
Original Abstract Submitted
A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.
