US Patent Application 18336304. Sram Performance Optimization Via Transistor Width And Threshold Voltage Tuning simplified abstract

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Sram Performance Optimization Via Transistor Width And Threshold Voltage Tuning

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)


Sram Performance Optimization Via Transistor Width And Threshold Voltage Tuning - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18336304 Titled 'Sram Performance Optimization Via Transistor Width And Threshold Voltage Tuning'

Simplified Explanation

The abstract describes a type of memory cell called Static Random Access Memory (SRAM) and its different components. The read-port of the SRAM cell consists of a read-port pass-gate (R_PG) transistor and a read-port pull-down (R_PD) transistor. The write-port of the SRAM cell includes a write-port pass-gate (W_PG) transistor, a write-port pull-down (W_PD) transistor, and a write-port pull-up (W_PU) transistor.

All of these transistors are gate-all-around (GAA) transistors, which is a specific type of transistor design. The R_PG transistor has a certain width, the R_PD transistor has a different width, the W_PG transistor has another width, the W_PD transistor has a fourth width, and the W_PU transistor has a fifth width.

It is mentioned that the first and fourth channel widths (referring to the R_PG and W_PD transistors) are smaller than the second channel width (referring to the R_PD transistor). Additionally, the third channel width (referring to the W_PG transistor) is greater than the fifth channel width (referring to the W_PU transistor).


Original Abstract Submitted

A read-port of a Static Random Access Memory (SRAM) cell includes a read-port pass-gate (R_PG) transistor and a read-port pull-down (R_PD) transistor. A write-port of the SRAM cell port includes at least a write-port pass-gate (W_PG) transistor, a write-port pull-down (W_PD) transistor, and a write-port pull-up (W_PU) transistor. The R_PG transistor, the R_PD transistor, the W_PG transistor, the W_PD transistor, and the W_PU transistor are gate-all-around (GAA) transistors. The R_PG transistor has a first channel width. The R_PD transistor has a second channel width. The W_PG transistor has a third channel width. The W_PD transistor has a fourth channel width. The W_PU transistor has a fifth channel width. The first channel width and the fourth channel width are each smaller than the second channel width. The third channel width is greater than the fifth channel width.

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