US Patent Application 17848815. 3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS simplified abstract
Contents
3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yao-Chung Chang of Zhubei City (TW)
Shih-Chien Liu of Hsinchu County (TW)
Chia-Jui Yu of Hsinchu County (TW)
Chun-Lin Tsai of Hsin-Chu (TW)
3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17848815 Titled '3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS'
Simplified Explanation
The abstract describes a three-dimensional integrated circuit (3D IC) that is made up of two semiconductor chips. The first chip has a certain type of semiconductor material with a specific bandgap, and it also has a device built on it. The second chip has a different type of semiconductor material with a different bandgap, and it also has a device built on it. These two chips are stacked on top of each other and bonded together to create the 3D IC.
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards a three-dimensional (3D) IC comprising semiconductor substrates with different bandgaps. The 3D IC chip comprises a first IC chip and a second IC chip overlying and bonded to the first IC chip. The first IC chip comprises a first semiconductor substrate with a first bandgap, and further comprises and a first device on and partially formed by the first semiconductor substrate. The second IC chip comprises a second semiconductor substrate with a second bandgap different than the first bandgap, and further comprises a second device on the second semiconductor substrate.
