US Patent Application 18326354. METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM simplified abstract
METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ssu-Yu Chen of New Taipei City (TW)
Shang-Chieh Chien of New Taipei City (TW)
Chieh Hsieh of Taoyuan City (TW)
Tzung-Chi Fu of Miaoli City, Miaoli County (TW)
Bo-Tsun Liu of Taipei City (TW)
Li-Jui Chen of Hsinchu City (TW)
Po-Chung Cheng of Zhongpu Township, Chiayi County (TW)
METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18326354 Titled 'METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM'
Simplified Explanation
This abstract describes a method for performing a lithography process, which is a technique used in semiconductor manufacturing to create circuit layouts. The method involves several steps. First, a photoresist layer is formed over a substrate. Then, a source vessel is provided with target droplets, and a controller sends a control signal to generate plasma by irradiating the target droplets with laser pulses. The plasma generates extreme ultraviolet (EUV) radiation when the temperature of the source vessel is within a certain threshold. The EUV radiation is then directed onto the photoresist layer to create a patterned photoresist layer. Finally, the patterned photoresist layer is developed and etched to form a circuit layout.
Original Abstract Submitted
A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.
