US Patent Application 17716517. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17716517 Titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME'
Simplified Explanation
This abstract describes a semiconductor memory device that consists of metal lines and memory arrays. Each memory array includes two sets of thin film transistors (TFTs), a first switch transistor, and a second switch transistor. The TFTs in each set are connected to each other in parallel. The first switch transistor is connected in series to one of the TFTs in the first set and one of the metal lines in a pair. The second switch transistor is connected in series to one of the TFTs in the second set and the other metal line in the pair.
Original Abstract Submitted
A semiconductor memory device includes pairs of metal lines and memory arrays. Each of the memory arrays includes first and second sets of thin film transistors (TFTs), a first switch transistor, and a second switch transistor. The TFTs in the first and second sets are electrically connected to each other in parallel. The first switch transistor is electrically connected in series to one of the TFTs in the first set and one of the metal lines in a corresponding one of the pairs of the metal lines. The second switch transistor is electrically connected in series to one of the TFTs in the second set and the other one of the metal lines in the corresponding one of the pairs of the metal lines.
