US Patent Application 18336105. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Chieh Lu of Taipei City (TW)
Sai-Hooi Yeong of Zhubei City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chih-Yu Chang of New Taipei City (TW)
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336105 Titled 'FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME'
Simplified Explanation
The abstract describes a ferroelectric memory device that consists of multiple layers stacked on a substrate. These layers include conductive layers and dielectric layers arranged alternately. A channel layer passes through these layers. A ferroelectric layer is placed between the channel layer and the conductive and dielectric layers. Additionally, there are oxygen scavenging layers along the sides of the conductive layers, which act as a barrier between the ferroelectric layer and the conductive layers.
Original Abstract Submitted
The present disclosure, in some embodiments, relates to a ferroelectric memory device. The ferroelectric memory device includes a multi-layer stack disposed on a substrate. The multi-layer stack has a plurality of conductive layers and a plurality of dielectric layers stacked alternately. A channel layer penetrates through the plurality of conductive layers and the plurality of dielectric layers. A ferroelectric layer is disposed between the channel layer and both of the plurality of conductive layers and the plurality of dielectric layers. A plurality of oxygen scavenging layers are disposed along sidewalls of the plurality of conductive layer. The plurality of oxygen scavenging layers laterally separate the ferroelectric layer from the plurality of conductive layers.
