US Patent Application 17716485. INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL simplified abstract
Contents
INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yun-Chi Chiang of Hsinchu (TW)
INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17716485 Titled 'INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL'
Simplified Explanation
The abstract describes a semiconductor device that consists of a substrate and an interconnect layer. The interconnect layer contains a structure made of a special material called a topological material. This topological material can be a topological insulator, a topological semimetal, or a combination of both. The abstract also mentions a method for manufacturing this semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes an interconnect structure which includes a topological material. The topological material includes a topological insulator, a topological semimetal, or a combination thereof. A method for manufacturing the semiconductor device is also disclosed.
