US Patent Application 17718071. MEMORY DEVICE AND FORMING METHOD THEREOF simplified abstract

MEMORY DEVICE AND FORMING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Meng-Han Lin of Hsinchu City (TW)

Chia-En Huang of Hsinchu County (TW)

MEMORY DEVICE AND FORMING METHOD THEREOF - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 17718071 Titled 'MEMORY DEVICE AND FORMING METHOD THEREOF'

Simplified Explanation

The abstract describes a memory device that consists of several components. These components include a word line, a gate dielectric layer, a semiconductor layer, a source line, and a resistance-switchable element. The word line is located on top of a substrate, and the gate dielectric layer is positioned on the side of the word line. The semiconductor layer is then placed on the side of the gate dielectric layer. The source line is in contact with one region of the semiconductor layer's side, while the resistance-switchable element is in contact with another region of the semiconductor layer's side.

Original Abstract Submitted

A memory device comprises a word line, a gate dielectric layer, a semiconductor layer, a source line, and a resistance-switchable element. The word line is over a substrate. The gate dielectric layer is on a sidewall of the word line. The semiconductor layer is on a sidewall of the gate dielectric layer. The source line is in contact with a first region of a sidewall of the semiconductor layer. The resistance-switchable element is in contact with a second region of the sidewall of the semiconductor layer.