US Patent Application 18332058. BIT LINE AND WORD LINE CONNECTION FOR MEMORY ARRAY simplified abstract

BIT LINE AND WORD LINE CONNECTION FOR MEMORY ARRAY

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chang-Chih Huang of Taichung (TW)

Jui-Yu Pan of Neipu Township (TW)

Kuo-Chyuan Tzeng of Chu-Pei City (TW)

BIT LINE AND WORD LINE CONNECTION FOR MEMORY ARRAY - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18332058 Titled 'BIT LINE AND WORD LINE CONNECTION FOR MEMORY ARRAY'

Simplified Explanation

The abstract describes an integrated chip that includes multiple layers of conductive interconnect structures. The first layer is located on top of a substrate, and a memory stack is placed on this layer. A second layer of conductive interconnect structures is positioned between the opposing sidewalls of the first layer. A third layer of conductive interconnect structures is placed on top of the first layer, with its top surface directly above the second layer.

Original Abstract Submitted

Various embodiments of the present application are directed towards an integrated chip including a first conductive interconnect structure overlying a substrate. A first memory stack is disposed on the first conductive interconnect structure. A second conductive interconnect structure overlies the first memory stack. The second conductive interconnect structure is spaced laterally between opposing sidewalls of the first conductive interconnect structure. A third conductive interconnect structure is disposed on the first conductive interconnect structure. A top surface of the third conductive interconnect structure is vertically above the second conductive interconnect structure.