US Patent Application 18333982. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Shu-Jui Chang of Hsinchu County (TW)

Shin-Yuan Wang of Chiayi City (TW)

Yu-Che Huang of Taipei City (TW)

Chun-Liang Lin of Hsinchu City (TW)

Chao-Hsin Chien of Hsinchu City (TW)

Chenming Hu of Oakland CA (US)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18333982 Titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME'

Simplified Explanation

This method involves creating a layer of a 2-D material on a substrate, which consists of transition metal atoms and chalcogen atoms. A gate structure is then formed on top of this layer. Chemical molecules are introduced to the 2-D material layer, causing certain atoms of the molecules to react with specific parts of the chalcogen atoms. This reaction weakens the covalent bonds between these parts of the chalcogen atoms and the transition metal atoms. Finally, source/drain contacts are formed on the 2-D material layer, where the contact metal atoms of these contacts create metallic bonds with the transition metal atoms of the 2-D material layer.

Original Abstract Submitted

A method includes forming a 2-D material layer over a substrate, wherein the 2-D material layer comprises transition metal atoms and chalcogen atoms; forming a gate structure over the 2-D material layer; supplying chemical molecules to the 2-D material layer, such that atoms of the chemical molecules react with portions of the chalcogen atoms to weaken covalent bonds between the portions of the chalcogen atoms and the transition metal atoms; and forming source/drain contacts over the 2-D material layer, wherein contact metal atoms of the source/drain contacts form metallic bonds with the transition metal atoms of the 2-D material layer.