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Category:H10B51/30
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Pages in category "H10B51/30"
The following 69 pages are in this category, out of 69 total.
1
- 18053182. Ferroelectric Memory Device And Electronic Device Including The Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18062245. VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18108722. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18132196. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18142291. THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18150281. SPACER FILM SCHEME FORM POLARIZATION IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151483. MEMORY ARRAY AND OPERATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155688. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156593. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18171167. SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18178529. FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18203886. FERROELECTRIC MEMORY ARRAYS WITH LOW PERMITTIVITY DIELECTRIC BARRIERS simplified abstract (Micron Technology, Inc.)
- 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18222278. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18236056. Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18301597. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18362196. 3D MEMORY MULTI-STACK CONNECTION METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18364616. EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18401988. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18446043. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18453483. SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18483907. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18492343. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18492964. MEMORY WITH FRAM AND SRAM OF IC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18501360. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18506177. EMBEDDED FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516908. INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518716. METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518736. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18525301. ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
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- Samsung electronics co., ltd. (20240107774). THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240107775). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240130138). SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096388). MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097032). METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240099016). SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240107776). ANTIFERROELECTRIC NON-VOLATILE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240114691). ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240138153). FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
U
- US Patent Application 18230864. TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME simplified abstract
- US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract
- US Patent Application 18358966. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 18361548. MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18365068. Memory Array and Methods of Forming Same simplified abstract
- US Patent Application 18446894. THREE-DIMENSIONAL MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18447495. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract