Taiwan semiconductor manufacturing company, ltd. (20240138153). FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY simplified abstract
Contents
- 1 FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chia-En Huang of Hsinchu County (TW)
Sai-Hooi Yeong of Hsinchu County (TW)
FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138153 titled 'FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY
Simplified Explanation
The abstract describes a ferroelectric memory device with specific layers and electrodes arranged in a unique configuration.
- The memory device includes a word line, source/drain electrodes, a channel layer, a work function layer, and a ferroelectric layer.
- The source/drain electrodes are positioned on opposite sides of the word line and are elevated from it.
- The channel layer has a bottom planar portion and wall portions, with the bottom planar portion extending along the word line's top surface.
- The work function layer is electrically connected to the word line and extends along the channel layer's bottom planar portion and wall portions.
- The ferroelectric layer separates the channel layer from the work function layer.
Potential Applications
This technology could be used in non-volatile memory devices, such as ferroelectric random-access memory (FeRAM) chips.
Problems Solved
This innovation addresses the need for high-density, low-power, and fast-access memory solutions in various electronic devices.
Benefits
The benefits of this technology include improved data retention, faster read/write speeds, and lower power consumption compared to traditional memory technologies.
Potential Commercial Applications
Commercial applications for this technology could include consumer electronics, industrial automation, and automotive systems.
Possible Prior Art
One example of prior art in this field is the development of ferroelectric memory devices with different electrode configurations and material compositions.
Unanswered Questions
How does this technology compare to other types of non-volatile memory devices on the market?
This article does not provide a direct comparison between this ferroelectric memory device and other non-volatile memory technologies, such as NAND flash or DRAM.
What are the potential challenges in scaling up production of this ferroelectric memory device for mass market adoption?
The article does not address the scalability and production challenges that may arise when transitioning this technology from the lab to commercial manufacturing processes.
Original Abstract Submitted
a ferroelectric memory device and a memory array are provided. the ferroelectric memory device includes a word line; a pair of source/drain electrodes, a channel layer, a work function layer and a ferroelectric layer. the source/drain electrodes are disposed at opposite sides of the word line, and elevated from the word line. the channel layer has a bottom planar portion and wall portions. the bottom planar portion extends along a top surface of the word line, and opposite ends of the bottom planar portion are connected to sidewalls of the source/drain electrodes through opposite ones of the wall portions. the work function layer is electrically connected to the word line, and extends along the bottom planar portion and the wall portions of the channel layer. the ferroelectric layer separates the channel layer from the work function layer.
