US Patent Application 18446894. THREE-DIMENSIONAL MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

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THREE-DIMENSIONAL MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Meng-Han Lin of Hsinchu (TW)]]

[[Category:Chia-En Huang of Xinfeng (TW)]]

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446894 titled 'THREE-DIMENSIONAL MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor device with specific structures and arrangements.

  • The device includes a first conductor structure that extends horizontally.
  • There is a first memory film in contact with the first conductor structure, extending vertically.
  • A first semiconductor film is also in contact with the first memory film, extending vertically.
  • The ends of the first semiconductor film align with the ends of the first memory film.
  • The device includes a second, third, and fourth conductor structure, all extending vertically.
  • The second and fourth conductor structures are connected to the ends of the first semiconductor film.
  • The third conductor structure is connected to a portion of the first semiconductor film between its ends.


Original Abstract Submitted

A semiconductor device includes a first conductor structure extending along a lateral direction. The semiconductor device includes a first memory film that extends along a vertical direction and is in contact with the first conductor structure. The semiconductor device includes a first semiconductor film that extends along the vertical direction and is in contact with the first memory film. Ends of the first semiconductor film align with ends of the first memory film, respectively. The semiconductor device includes a second conductor structure extending along the vertical direction. The semiconductor device includes a third conductor structure extending along the vertical direction. The semiconductor device includes a fourth conductor structure extending along the vertical direction. The second and fourth conductor structures are coupled to the ends of the first semiconductor film, and the third conductor structure is coupled to a portion of the first semiconductor film between its ends.

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