18222278. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18222278 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Simplified Explanation
The present disclosure relates to methods, apparatuses, and systems for operating and manufacturing a semiconductor device. The semiconductor device includes a stack structure with interlayer insulating layers and gate electrodes, a channel layer inside a hole penetrating through the stack structure, a data storage layer between the stack structure and the channel layer, data storage patterns between the data storage layer and the gate electrodes, and dielectric layers between the data storage patterns and the gate electrodes. The interlayer insulating layers and gate electrodes are stacked alternately and repeatedly in a first direction. The data storage layer is made of a different material than the data storage patterns.
- The patent application describes a semiconductor device with a unique stack structure and materials composition.
- The device includes interlayer insulating layers, gate electrodes, a channel layer, data storage layer, data storage patterns, and dielectric layers.
- The interlayer insulating layers and gate electrodes are stacked in a repeated pattern.
- The data storage layer has a different material composition than the data storage patterns.
Potential Applications:
- This technology can be applied in the manufacturing of advanced semiconductor devices.
- It may find use in memory devices, such as flash memory or non-volatile memory.
- The unique stack structure and materials composition can enhance device performance and reliability.
Problems Solved:
- The disclosed technology addresses the need for improved semiconductor device performance.
- It solves the problem of data storage and retention in a compact and efficient manner.
- The stack structure and materials composition provide better control over device operation.
Benefits:
- The use of different materials in the data storage layer and patterns allows for optimized device performance.
- The repeated stacking of interlayer insulating layers and gate electrodes enhances device reliability.
- The technology enables the manufacturing of more advanced and efficient semiconductor devices.
Original Abstract Submitted
The present disclosure provides methods, apparatuses, and systems for operating and manufacturing a semiconductor device. In some embodiments, a semiconductor device includes a stack structure including interlayer insulating layers and gate electrodes, a channel layer disposed inside a hole penetrating through the stack structure, a data storage layer disposed between the stack structure and the channel layer, data storage patterns disposed between the data storage layer and the gate electrodes, and dielectric layers disposed between the data storage patterns and the gate electrodes. The interlayer insulating layers and the gate electrodes are alternately and repeatedly stacked in a first direction. A first material of the data storage layer is different from a second material of the data storage patterns.
