US Patent Application 18447495. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
Jump to navigation
Jump to search
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sai-Hooi Yeong of Zhubei City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447495 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Simplified Explanation
The patent application describes a method of manufacturing semiconductor devices with a ferroelectric random access memory (FRAM) array.
- The FRAM array is formed with bit line drivers and source line drivers located below it.
- The method includes the formation of a through via, which is created using the same processes used to form individual memory cells within the FRAM array.
Original Abstract Submitted
Semiconductor devices and methods of manufacture are provided wherein a ferroelectric random access memory array is formed with bit line drivers and source line drivers formed below the ferroelectric random access memory array. A through via is formed using the same processes as the processes used to form individual memory cells within the ferroelectric random access memory array.
