Taiwan semiconductor manufacturing co., ltd. (20240099016). SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099016 titled 'SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The memory structure described in the abstract consists of memory cells arranged in an array, each containing a memory region, word line portion, and multiple conductive blocks.
- Memory cells arranged in an array
- Memory region in each cell
- Word line portion on the first surface of the memory region
- First, second, and third conductive blocks on the second surface of the memory region
- Third conductive block positioned between and separated from the first and second conductive blocks
Potential Applications
The memory structure with multiple conductive blocks can be used in:
- Solid-state drives
- Embedded systems
- High-performance computing
Problems Solved
This technology addresses issues such as:
- Improving memory cell performance
- Enhancing data storage capacity
- Increasing data transfer speeds
Benefits
The benefits of this memory structure include:
- Higher data storage density
- Faster data access times
- Improved overall system performance
Potential Commercial Applications
The memory structure can be applied in various commercial settings, including:
- Data centers
- Consumer electronics
- Automotive systems
Possible Prior Art
One possible prior art is the use of multiple conductive blocks in memory cells to enhance performance and storage capacity.
Unanswered Questions
How does this memory structure compare to traditional memory cell designs?
The article does not provide a direct comparison between this memory structure and traditional memory cell designs. It would be helpful to understand the specific advantages or disadvantages of this new design in comparison to existing technologies.
What are the manufacturing implications of incorporating multiple conductive blocks in memory cells?
The article does not delve into the manufacturing process or challenges associated with implementing memory cells with multiple conductive blocks. Understanding the manufacturing implications could provide insights into the scalability and cost-effectiveness of this technology.
Original Abstract Submitted
a memory structure includes a plurality of memory cells arranged in an array. each of the memory cells includes a memory region, a word line portion disposed on a first surface of the memory region, a first conductive block disposed on a second surface of the memory region opposite to the first surface, a second conductive block disposed on the second surface of the memory region, and a third conductive block disposed on the second surface of the memory region such that the third conductive block is disposed between and separated from the first conductive block and the second conductive block.
